Type: Four-layer (PNPN), three-terminal semiconductor device
Terminals: Anode (A), Cathode (K), Gate (G)
Function: Acts as a controlled switch for high-power applications. Conducts current only after gate trigger and remains on until current drops below holding current.
Key Features:
Triggering Methods: Gate triggering most common; also dv/dt, temperature, or light (in LASCR).
Turn-off: Requires anode current to fall below holding current or forced commutation.
Applications: Phase control, rectifiers, surge protection, motor speed control.
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