Schottky Barrier Diode

Type: Unipolar majority carrier device

Structure: Metal-Semiconductor junction (e.g., Pt/n-Si, Al/n-Si)

Key Features:

• ✔ Low forward voltage drop (~0.15–0.45 V)
• ✔ Fast switching speed (no minority carrier storage)
• ✔ High efficiency in high-frequency applications
• ✔ Higher reverse leakage current than PN diodes
• ✔ Limited reverse breakdown voltage

Applications:

• • RF mixers and detectors
• • Power rectification in SMPS
• • Reverse polarity protection
• • Clamping and freewheeling diodes

Common Materials: Si, GaAs, SiC (for high power/temperature)

Note: Avoids diffusion capacitance due to majority carrier conduction.