| HY57V641620ETP-H
|
|
SK hynix |
860 |
1 |
145.77 |
贸泽采购
|
| MT41K128M16JT-107:K
|
|
Micron Technology |
1111 |
1 |
53.68 |
贸泽采购
|
| MT48LC8M16A2P6AITL
|
|
Micron Technology |
1261 |
1 |
215.83 |
贸泽采购
|
| AS4C32M8SA-7TCN
|
|
Alliance Memory |
83 |
1 |
110.97 |
贸泽采购
|
| MT41K256M8DA-125 AIT:K TR
|
|
Micron Technology |
2000 |
2000 |
54.35 |
贸泽采购
|
| AS4C16M16SA-7TCNTR
|
|
Alliance Memory |
2656 |
1 |
110.97 |
贸泽采购
|
| K4S641632H-UC60
|
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II T/R |
Samsung |
5493 |
2 |
247.47 |
贸泽采购
|
| MT41K256M16TW-107 AAT:P
|
IC DRAM 4G PARALLEL 96FBGA |
Micron Technology |
1900 |
1 |
112.21 |
贸泽采购
|
| MT41K256M8DA-125:K
|
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin FBGA |
Micron Technology |
256 |
1 |
69.72 |
贸泽采购
|
| S27KL0641DABHA020
|
|
Infineon Technologies |
666 |
1 |
34.47 |
贸泽采购
|
| MT46H32M16LFBF-5IT:C
|
|
Micron Technology |
9000 |
1 |
189.84 |
贸泽采购
|
| MSM514400E-60SJ
|
|
LAPIS Semiconductor |
1000 |
1 |
106.67 |
贸泽采购
|
| MT41K128M16JT-125 AIT:K
|
IC DRAM 2G PARALLEL 96FBGA |
Micron Technology |
456 |
1 |
57.4 |
贸泽采购
|
| K4S161622H-UC60
|
DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 50-Pin TSOP-II T/R |
Samsung |
163 |
1 |
69.5 |
贸泽采购
|
| MT41K256M8DA-125 IT:K TR
|
|
Micron Technology |
4000 |
2000 |
32.21 |
贸泽采购
|
| IS42S16400J-7TLI
|
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II |
Integrated Silicon Solution |
115 |
1 |
39.21 |
贸泽采购
|
| IS43LR32800G-6BLI
|
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin TFBGA |
Integrated Silicon Solution |
29 |
1 |
66.22 |
贸泽采购
|
| W9864G2GH-7
|
|
Winbond Electronics |
17 |
1 |
89.72 |
贸泽采购
|
| MT41K64M16TW-107 IT:J TR
|
IC DRAM 1G PARALLEL 96FBGA |
Micron Technology |
8000 |
2000 |
35.82 |
贸泽采购
|
| IS42S16400J-7TL
|
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II |
Integrated Silicon Solution |
746 |
1 |
78.42 |
贸泽采购
|
| W9712G6KB-25
|
|
Winbond Electronics |
122 |
1 |
17.74 |
贸泽采购
|
| MT41K64M16TW-107 IT:J
|
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin FBGA |
Micron Technology |
6698 |
1 |
63.39 |
贸泽采购
|
| MT48LC32M16A2P-75:C
|
|
Micron Technology |
7 |
1 |
1175.2 |
贸泽采购
|
| W9812G2DB75
|
|
Winbond Electronics |
909 |
1 |
143.51 |
贸泽采购
|
| EDS2516APTA-75TI-E
|
|
Elpida Memory |
14 |
1 |
241.82 |
贸泽采购
|
| MT48LC16M16A2P-6A:G
|
|
Micron Technology |
132 |
1 |
166.11 |
贸泽采购
|
| MT48LC2M32B2TG-7G
|
|
Micron Technology |
245 |
1 |
72.09 |
贸泽采购
|
| MT46H32M32LFB5-5 IT:B
|
DRAM Chip Mobile LPDDR SDRAM 1Gbit 32Mx32 1.8V 90-Pin VFBGA |
Micron Technology |
3751 |
1 |
100.23 |
贸泽采购
|
| MT48LC4M32B2B5-6A XIT:L
|
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin VFBGA |
Micron Technology |
554 |
1 |
174.02 |
贸泽采购
|
| W9864G2GH-6
|
|
Winbond Electronics |
425 |
50 |
51.42 |
贸泽采购
|
| IS43TR16128DL-125KBL
|
|
Integrated Silicon Solution |
2079 |
190 |
39.32 |
贸泽采购
|
| IS42S32400E-7TL
|
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II |
Integrated Silicon Solution |
1396 |
1 |
179.67 |
贸泽采购
|
| MT41K256M16TW-107 IT:P TR
|
|
Micron Technology |
2003 |
1 |
62.26 |
贸泽采购
|
| MT41K128M16JT-125 IT:K TR
|
IC DRAM 2G PARALLEL 96FBGA |
Micron Technology |
54000 |
2000 |
32.54 |
贸泽采购
|
| W9412G6KH-5 TR
|
|
Winbond Electronics |
1000 |
1000 |
8.79 |
贸泽采购
|
| IS43DR16160B-3DBL
|
DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin TW-BGA |
Integrated Silicon Solution |
387 |
1 |
37.29 |
贸泽采购
|
| IS43R16160D-6TLI
|
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II |
Integrated Silicon Solution |
96 |
1 |
84.86 |
贸泽采购
|
| MT48H4M32LFB5-6 IT:K
|
DRAM Chip Mobile SDRAM 128Mbit 4Mx32 1.8V 90-Pin VFBGA Tray |
Micron Technology |
2 |
250 |
0.04 |
贸泽采购
|
| MT41K128M16JT-125 AIT:K
|
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin FBGA |
Micron Technology |
995 |
1 |
86.22 |
贸泽采购
|
| IS43TR82560C125KBL
|
|
Integrated Silicon Solution |
972 |
242 |
36.61 |
贸泽采购
|
| MT18LSDT1672AG-10EG8
|
|
Micron Technology |
6 |
250 |
0.04 |
贸泽采购
|
| K4S561632NLC75
|
|
Samsung |
7 |
1 |
175.15 |
贸泽采购
|
| IS42S16100H-7BLI
|
|
Integrated Silicon Solution |
572 |
286 |
15.93 |
贸泽采购
|
| W364M72V-133SBI
|
|
Microchip Technology |
10 |
1 |
13808.6 |
贸泽采购
|
| MT48LC4M32B2P-6
|
|
Micron Technology |
32 |
1 |
180.8 |
贸泽采购
|
| S27KS0642GABHI030
|
|
Infineon Technologies |
497 |
1 |
34.13 |
贸泽采购
|
| MT47H128M8SH-25E IT:M
|
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA |
Micron Technology |
6903 |
1 |
62.26 |
贸泽采购
|
| HY57V641620HGT-P
|
|
SK hynix |
269 |
1 |
132.21 |
贸泽采购
|
| EDD2516AETA5BE
|
|
Elpida Memory |
99 |
1 |
57.97 |
贸泽采购
|
| MT48LC16M16A2B4-7E IT:G
|
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin VFBGA |
Micron Technology |
341 |
1 |
101.81 |
贸泽采购
|
| MT46H128M16LFDD-48 IT:C
|
IC DRAM 2G PARALLEL 60VFBGA |
Micron Technology |
884 |
1 |
124.3 |
贸泽采购
|
| IS43TR81280B-15GBLI
|
|
Integrated Silicon Solution |
5 |
1 |
37.97 |
贸泽采购
|
| MT48LC4M32B2P-6 IT:G
|
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II Tray |
Micron Technology |
1 |
1 |
85.99 |
贸泽采购
|
| MT41K512M16VRP-107 AIT:P
|
|
Micron Technology |
1210 |
1 |
137.86 |
贸泽采购
|
| MT41K256M16TW-107 IT:P
|
IC SDRAM 4GBIT 933MHZ 96FBGA |
Micron Technology |
884 |
1 |
247.47 |
贸泽采购
|
| MT48LC2M32B2TG-6
|
DRAM Chip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II Tray |
Micron Technology |
986 |
10 |
94.58 |
贸泽采购
|
| MSM518221-25ZS
|
|
LAPIS Semiconductor |
806 |
1 |
228.26 |
贸泽采购
|
| W9725G6KB25I TR
|
|
Winbond Electronics |
10000 |
2500 |
17.18 |
贸泽采购
|
| MT46H32M16LFBF-5 IT:C TR
|
IC DRAM 512M PARALLEL 60VFBGA |
Micron Technology |
4000 |
1000 |
30.28 |
贸泽采购
|
| IS42S32200L-6TL
|
DRAM Chip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II |
Integrated Silicon Solution |
24 |
1 |
27.69 |
贸泽采购
|
| MT48LC8M16A2P-6A IT:L
|
DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II |
Micron Technology |
2 |
1 |
122.04 |
贸泽采购
|
| AS4C8M16SA-6TCN
|
|
Alliance Memory |
64 |
1 |
28.82 |
贸泽采购
|
| IS43TR16640CL-107MBLI
|
|
Integrated Silicon Solution |
380 |
190 |
20.91 |
贸泽采购
|
| IS43R16160D-5BLI
|
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 60-Pin TFBGA |
Integrated Silicon Solution |
17 |
1 |
57.29 |
贸泽采购
|
| W3J128M72G-1066PBI
|
|
Microchip Technology |
2 |
1 |
5661.3 |
贸泽采购
|
| MT46H64M16LFBF-5 IT:B
|
DRAM Chip Mobile LPDDR SDRAM 1Gbit 64Mx16 1.8V 60-Pin VFBGA |
Micron Technology |
1462 |
1 |
63.17 |
贸泽采购
|
| MT47H128M16RT-25E IT:C
|
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray |
Micron Technology |
1959 |
1 |
120.91 |
贸泽采购
|
| HM5165160TT-6
|
DRAM Chip FPM 64M-Bit 4Mx16 3.3V 50-Pin TSOP-II |
Hitachi |
112 |
1 |
211.31 |
贸泽采购
|
| MT47H128M16RT-25E AIT:C
|
DRAM Chip DDR2 SDRAM 2G-Bit 128Mx16 1.8V 84-Pin FBGA |
Micron Technology |
8 |
1 |
642.97 |
贸泽采购
|
| IS42S16100H-7TLI-TR
|
|
Integrated Silicon Solution |
218 |
1 |
11.75 |
贸泽采购
|
| IS42S16400J-5TL
|
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II |
Integrated Silicon Solution |
140 |
1 |
27.69 |
贸泽采购
|
| MT47H128M8SH-25E IT:M
|
|
Micron Technology |
1518 |
1 |
120.91 |
贸泽采购
|
| MT41K64M16TW-107:J
|
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin FBGA Tray |
Micron Technology |
5098 |
1 |
60.23 |
贸泽采购
|
| MT47H128M16RT-25E:C
|
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray |
Micron Technology |
594 |
1 |
128.82 |
贸泽采购
|
| IS42VM16160K-6BLI
|
|
Integrated Silicon Solution |
38 |
1 |
59.33 |
贸泽采购
|
| MT48LC4M16A2P-6A IT:J
|
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II |
Micron Technology |
303 |
1 |
78.76 |
贸泽采购
|
| NT5TU64M16GG-AC
|
|
Nanya Technology |
10450 |
1 |
134.47 |
贸泽采购
|
| MT53E768M32D4DT-046 AIT:E
|
|
Micron Technology |
10170 |
1 |
291.54 |
贸泽采购
|
| W634GU6MB-12
|
|
Winbond Electronics |
15 |
1 |
46.22 |
贸泽采购
|
| AS4C8M32S-7TCN
|
|
Alliance Memory |
200 |
1 |
126.56 |
贸泽采购
|
| MT41K512M16HA-107:A
|
IC DRAM 8G PARALLEL 96FBGA |
Micron Technology |
2647 |
1 |
513.02 |
贸泽采购
|
| A4F16QG8BNRCME
|
|
ATP Electronics |
1 |
1 |
1209.1 |
贸泽采购
|
| MT46H64M32LFBQ-48 WT:C TR
|
IC DRAM 2G PARALLEL 90VFBGA |
Micron Technology |
2600 |
1 |
170.63 |
贸泽采购
|
| W9725G6KB-25
|
|
Winbond Electronics |
2878 |
1 |
17.74 |
贸泽采购
|
| IS43QR16256B-083RBLI
|
|
Integrated Silicon Solution |
18 |
1 |
112.55 |
贸泽采购
|
| MT47H32M16NF-25E IT:H
|
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA |
Micron Technology |
317 |
1 |
51.19 |
贸泽采购
|
| MT41J128M16JT-125:K
|
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA |
Micron Technology |
3903 |
1 |
73.22 |
贸泽采购
|
| MT47H128M8CF-25E:H
|
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA |
Micron Technology |
324 |
1 |
116.39 |
贸泽采购
|
| IS43DR16640C-25DBLI-TR
|
|
Integrated Silicon Solution |
4954 |
1 |
40.45 |
贸泽采购
|
| IS42S16800F-6TLI
|
|
Integrated Silicon Solution |
108 |
1 |
123.17 |
贸泽采购
|
| MT46V32M16P-6T:F
|
|
Micron Technology |
65 |
1 |
204.53 |
贸泽采购
|
| IS42S16160D-6TL
|
|
Integrated Silicon Solution |
72 |
1 |
239.56 |
贸泽采购
|
| MSM5117405F-60SJ
|
|
LAPIS Semiconductor |
350 |
1 |
74.47 |
贸泽采购
|
| IS42S16400J-7TL-TR
|
|
Integrated Silicon Solution |
160 |
1 |
17.18 |
贸泽采购
|
| K4S641632H-TC75
|
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II T/R |
Samsung |
1213 |
1 |
104.86 |
贸泽采购
|
| MT41K128M16JT-107:K TR
|
|
Micron Technology |
4000 |
2000 |
43.39 |
贸泽采购
|
| IS42S16800F-6BLI
|
|
Integrated Silicon Solution |
1044 |
1 |
176.28 |
贸泽采购
|
| MT41K128M8DA-107:J
|
DRAM Chip DDR3L SDRAM 1Gbit 128Mx8 1.35V 78-Pin FBGA |
Micron Technology |
262 |
1 |
60.46 |
贸泽采购
|
| IS42S32400F-7TL
|
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II |
Integrated Silicon Solution |
1 |
1 |
69.5 |
贸泽采购
|
| MT46V32M16P-5B:J
|
IC DRAM 512M PARALLEL 66TSOP |
Micron Technology |
712 |
1080 |
46.9 |
贸泽采购
|